S9014W Datasheet, PDF (1/1 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

S901 4W
TRANSISTOR(NPN)
FEATURES
 Complementary to S9015W
 Small Surface Mount Package
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
50
VCEO Collector-Emitter Voltage
45
VEBO Emitter-Base Voltage
5
IC
Collector Current
100
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=100µA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=50V, IE=0
Collector cut-off current
ICEO
VCE=35V, IB=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE
VCE=5V, IC=1mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=5mA
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=5mA
Base-emitter voltage
VBE
VCE=5V, IC=2mA
Transition frequency
fT
VCE=5V,IC=10mA , f=30MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L
200–450
H
450–1000
J6
Min
Typ
Max Unit
50
V
45
V
5
V
100
nA
100
nA
100
nA
200
1000
0.3
V
1
V
0.58
0.7
V
150
MHz
3.5
pF
JinYu
semiconductor
www.htsemi.com