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| S9014 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN General Purpose Transistors | |||
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S901 4
TRANSISTOR (NPN)
SOT-23
FEATURES
z Complementary to S9015
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J6
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
5
0.1
0.2
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
50
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
45
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=50 V , IE=0
Collector cut-off current
ICEO
VCE=35V , IB=0
Emitter cut-off current
IEBO
VEB= 3V , IC=0
DC current gain
hFE
VCE=5V, IC= 1mA
200
Collector-emitter saturation voltage
VCE(sat) IC=100 mA, IB= 5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=100 mA, IB= 5mA
fT
VCE=5V, IC= 10mA
f=30MHz
150
Units
V
V
V
A
W
â
â
MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
1000
0.3
V
1
V
MHz
CLASSIFICATION OF hFE
Rank
Range
L
200-450
H
450-1000
JinYu
semiconductor
www.htsemi.com
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