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| S9013 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS | |||
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S901 3
TRANSISTOR(NPN)
SOT-23
FEATURES
z Complementary to S9012
z Excellent hFE linearity
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J3
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
500
300
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE=100μA, IC=0
VCB=40V, IE=0
VCE=20V, IB=0
VEB= 5V, IC=0
VCE=1V, IC= 50mA
VCE=1V, IC=500mA
IC=500mA, IB= 50mA
IC=500mA, IB= 50mA
VCE=6V, IC= 20mA
f=30MHz
MIN
40
25
5
120
40
150
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.6
V
1.2
V
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
H
200-350
J
300-400
JinYu
semiconductor
www.htsemi.com
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