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| S9012 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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S901 2
TRANSISTOR(PNP)
FEATURES
z Complementary to S9013
z Excellent hFE linearity
MARKING: 2T1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
Value
-40
-25
-5
-500
300
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test conditions
IC= -100μA, IE=0
IC= -1mA, IB=0
IE=-100μA, IC=0
MIN
-40
-25
-5
Collector cut-off current
ICBO
VCB=-40V, IE=0
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=-1V, IC= -50mA
120
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB= -50mA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat) IC=-500mA, IB= -50mA
fT
VCE=-6V, IC= -20mA
150
f=30MHz
Cob
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
L
120-200
H
200-350
TYP MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.6 V
-1.2 V
MHz
5
pF
J
300-400
JinYu
semiconductor
www.htsemi.com
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