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| PXT8050 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN) | |||
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PXT8 050
TRANSISTOR(NPN)
SOT-89
FEATURES
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power dissipation
0.5
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Emitter cut-off current
ICEO
VCE=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=100mA
VCE=1V, IC=800mA
85
400
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
1.2
V
Base-emitter voltage
VBE
VCE=1V, IC=10mA
1
V
Base-emitter positive favor voltage
VBEF IB=1A
1.55
V
Transition frequency
fT
VCE=10V,IC=50mA,f=30MHz
100
MHz
output capacitance
CLASSIFICATION OF hFE(1)
Rank
B
Cob
VCB=10V,IE=0,f=1MHz
C
D
15
pF
D3
Range
85-160
120-200
160-300
300-400
JinYu
semiconductor
www.htsemi.com
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