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| PXT3906 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor | |||
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PXT3906
TRANSISTOR(PNP)
FEATURES
z Compliment to PXT3904
z Low current
z Low voltage
MARKING: 2A
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
SOT-89
1. BASE
1
2. COLLECTOR
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cc
Ce
NF
td
tr
tS
tf
Test conditions
IC=-10μA,IE=0
IC=-1mA,IB=0
IE=-10μA,IC=0
VCB=-30V,IE=0
VEB=-6V,IC=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VEB=-0.5V,IC=0,f=1MHz
VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz,
RS=1Kâ¦
IC=-10mA , IB1=-IB2= -1mA
MIN
-40
-40
-6
60
80
100
60
30
-0.65
250
TYP
MAX
-0.05
-0.05
UNIT
V
V
V
μA
μA
300
-0.25
-0.4
-0.85
-0.95
4.5
10
V
V
V
V
MHz
pF
pF
4
dB
35
nS
35
nS
225 nS
75
nS
JinYu
semiconductor
www.htsemi.com
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