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| PXT3904 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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PXT3904
TRANSISTOR(NPN)
SOT-89
1. BASE
FEATURES
z Compliment to PXT3906
z Low current
z Low voltage
MARKING: 1A
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous 0.2
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150 â
1
2. COLLECTOR
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cc
Ce
NF
td
tr
tS
tf
Test conditions
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCB=30V,IE=0
VEB=6V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz,
RS=1Kâ¦
IC=10mA , IB1=-IB2= 1mA
MIN TYP
60
40
6
60
80
100
60
30
0.65
300
MAX
0.05
0.05
UNIT
V
V
V
μA
μA
300
0.2
V
0.3
V
0.85
V
0.95
V
MHz
4
pF
8
pF
5
dB
35
nS
35
nS
200 nS
50
nS
JinYu
semiconductor
www.htsemi.com
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