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| PXT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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PXT2222A
TRANSISTOR (NPN)
SOT-89
FEATURES
z Epitaxial planar die construction
z Complementary PNP Type available(PXT2907A)
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
75
V
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current -Continuous
600
mA
Collector Power Dissipation
0.5
W
Junction Temperature
150
â
Storage Temperature
-55 +150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC= 10μ A,IE=0
75
Collector-emitter breakdown voltage
V(BR)CEO IC= 10mA, IB=0
40
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
6
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
VBE(sat) IC=500mA, IB=50mA
VBE(sat) IC=150mA, IB=15mA
0.6
fT
VCE=10V, IC=20mA
f=100MHz
300
Cob
VCB=10V, IE= 0,f=1MHz
td
VCC=30V, IC=150mA
tr
VBE(off)=0.5V,IB1=15mA
Storage time
Fall time
tS
VCC=30V, IC=150mA
tf
IB1=- IB2= 15mA
MAX
0. 01
0. 01
UNIT
V
V
V
μA
μA
300
1
V
0.3
V
2.0
V
1.2
V
MHz
8
pF
10
nS
25
nS
225
nS
60
nS
JinYu
semiconductor
www.htsemi.com
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