MMST5551 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMST5551
TRANSISTOR(NPN)
FEATURES
 Complementary to MMST5401
 Small Surface Mount Package
 Ideal for Medium Power Amplification and Switching
MARKING:K4N
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
180
VCEO Collector-Emitter Voltage
160
VEBO Emitter-Base Voltage
6
IC
Collector Current
600
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=120V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
VCE=5V, IC=1mA
DC current gain
hFE
VCE=5V, IC=10mA
VCE=5V, IC=50mA
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-emitter saturation voltage
VBE(sat)
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Transition frequency
fT
VCE=10V,IC=10mA , f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Min
Typ
Max Unit
180
V
160
V
6
V
50
nA
50
nA
80
80
300
30
0.2
V
0.15
V
1
V
1
V
100
300
MHz
6
pF
JinYu
semiconductor
www.htsemi.com