MMST5401 Datasheet, PDF (1/1 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMST5401
TRANSISTOR(PNP)
FEATURES
 Complementary to MMST5551
 Small Surface Mount Package
 Ideal for Medium Power Amplificationand Switching
SOT–323
MARKING:K4M
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-160
VCEO Collector-Emitter Voltage
-150
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-600
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-160
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-150
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-120V, IE=0
-50
nA
Emitter cut-off current
IEBO
VEB=-3V, IC=0
-50
nA
VCE=-5V, IC=-1mA
50
DC current gain
hFE
VCE=-5V, IC=-10mA
60
300
VCE=-5V, IC=-50mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
-0.5
V
-0.2
V
Base-emitter saturation voltage
VBE(sat)
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
-1
V
-1
V
Transition frequency
fT
VCE=-10V,IC=-10mA , f=100MHz
100
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
6
pF
JinYu
semiconductor
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