MMST4403 Datasheet, PDF (1/1 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMST4403
TRANSISTOR(PNP)
FEATURES
 Complementary To MMST4401
 Small Surface Mount Package
MARKING:K3T
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-40
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-600
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V, IE=0
-100
nA
Collector cut-off current
ICEO
VCE=-35V, IB=0
-500
nA
VCE=-1V, IC=-100µA
30
VCE=-1V, IC=-1mA
60
DC current gain
hFE
VCE=-1V, IC=-10mA
100
VCE=-2V, IC=-150mA
100
300
VCE=-2V, IC=-500mA
20
Collector-emitter saturation voltage
VCE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
-0.4
V
-0.75
V
Base-emitter saturation voltage
VBE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
-0.75
-0.95
V
-1.3
V
Transition frequency
fT
VCE=-10V,IC=-20mA , f=100MHz
200
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
8.5
pF
JinYu
semiconductor
www.htsemi.com