MMST3904 Datasheet, PDF (1/1 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMST3904
TRANSISTOR(NPN)
FEATURES
 Complementary to MMST3906
MARKING:K2N
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
40
VEBO Emitter-Base Voltage
5
IC
Collector Current
200
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V(BR)CBO* IC=10µA, IE=0
60
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0
40
Emitter-base breakdown voltage
V(BR)EBO* IE=10µA, IC=0
5
Collector cut-off current
ICBO*
VCB=60V, IE=0
Collector cut-off current
ICEO*
VCE=40V, IB=0
VCE=1V, IC=100µA
40
DC current gain
VCE=1V, IC=1mA
70
hFE*
VCE=1V, IC=10mA
100
VCE=1V, IC=50mA
60
Collector-emitter saturation voltage
VCE(sat)*
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-emitter saturation voltage
VBE(sat)*
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Transition frequency
fT
VCE=20V,IC=10mA , f=100MHz
300
Collector output capacitance
Cob
VCB=5V, IE=0, f=1MHz
Collector output capacitance
Cib
VEB=0.5V, IE=0, f=1MHz
Delay time
td
VCC=3V, VBE(off)=0.5V IC=10mA,
Rise time
tr
IB1=1mA
Storage time
Fall time
ts
VCC=3V, IC=10mA, IB1= IB2=1mA
tf
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.
Max
60
500
300
0.25
0.3
0.85
0.95
4
8
35
35
225
75
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
JinYu
semiconductor
www.htsemi.com