MMBTA94 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

MMBTA94
TRANSISTOR(PNP)
SOT–23
FEATURES
 High Breakdown Voltage
MARKING:4D
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-400
VCEO Collector-Emitter Voltage
-400
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-100
PC
Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-400V, IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE=-400V, IB=0
-5
µA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.1
µA
hFE(1)
VCE=-10V, IC=-10mA
80
300
DC current gain
hFE(2)
VCE=-10V, IC=-1mA
70
hFE(3)
VCE=-10V, IC=-100mA
40
hFE(4)
VCE=-10V, IC=-50mA
40
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.2
V
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-10mA, IB=-1mA
-0.75
V
Transition frequency
VCE=-20V,IC=-10mA,
fT
50
f=30MHz
MHz
JinYu
semiconductor
www.htsemi.com