MMBTA93 Datasheet, PDF (1/1 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR PNP SILICON

MMBTA93
TRANSISTOR(PNP)
SOT–23
FEATURES
 High Voltage Application
 Telephone Application
 Complementary to MMBTA43
MARKING:YW
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Value
-200
Collector-Emitter Voltage
-200
Emitter-Base Voltage
-5
Collector Current
-500
Collector Power Dissipation
350
Thermal Resistance From Junction To Ambient
357
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)*
hFE(2*)
hFE(3)*
VCE(sat)*
VBE(sat)*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-200V, IE=0
VCE=-200V, IB=0
VEB=-5V, IC=0
VCE=-10V, IC=-10mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-30mA
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-20V,IC=-10mA,
f=100MHz
VCB=-20V, IE=0, f=1MHz
Min
Typ
Max
-200
-200
-5
-0.25
-0.25
-0.1
40
25
25
-0.5
-0.9
50
8
Unit
V
V
V
µA
µA
µA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com