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| MMBTA92 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor | |||
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MMBTA92
TRANSISTOR(PNP)
SOT-23
FEATURES
High voltage transistor
MARKING:2D
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RÓ¨JA
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Value
-300
-300
-5
-300
300
150
-55-150
410
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Units
V
V
V
mA
mW
â
â
â/mW
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
IC= -100μA, IE=0
IC= -1mA, IB=0
IE= -100μA, IC=0
VCB=-200V, IE=0
VEB= -5V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC=-10mA
VCE= -10V, IC=-30mA
IC=-20mA, IB= -2mA
IC= -20mA, IB= -2mA
VCE=-20V, IC= -10mA
f=30MHz
MIN
-300
-300
-5
60
100
60
50
MAX
-0.25
-0.1
200
-0.2
-0.9
UNIT
V
V
V
μA
μA
V
V
MHz
JinYu
semiconductor
www.htsemi.com
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