MMBTA55 Datasheet, PDF (1/1 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBTA55
TRANSISTOR(PNP)
SOT–23
FEATURES
 Driver Transistors
MARKING:2H
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-60
VEBO Emitter-Base Voltage
-4
IC
Collector Current
-500
PC
Collector Power Dissipation
225
RΘJA Thermal Resistance From Junction To Ambient
556
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-60
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-4
Collector cut-off current
ICBO
VCB=-60V, IE=0
Collector cut-off current
ICEO
VCE=-60V, IB=0
DC current gain
hFE(1) VCE=-1V, IC=-10mA
100
hFE(2) VCE=-1V, IC=-100mA
100
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Base-emitter voltage
VBE
VCE=-1V, IC=-100mA
Transition frequency
fT
VCE=-1V,IC=-100mA, f=100MHz
50
Typ
Max Unit
V
V
V
-0.1 µA
-0.1 µA
-0.25
-1.2
V
V
MHz
JinYu
semiconductor
www.htsemi.com