MMBTA44 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT-23-3L Plastic-Encapsulate Transistors

MMBTA44
TRANSISTOR(NP)
SOT–23
FEATURES
 High Collector-Emitter Voltage
 Complement to MMBTA94
MARKING: 3D
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
500
VCEO Collector-Emitter Voltage
400
VEBO Emitter-Base Voltage
6
IC
Collector Current
100
PC
Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
500
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA, IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=400V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.1
µA
hFE(1) *
VCE=10V, IC=1mA
40
DC current gain
hFE(2) *
VCE=10V, IC=10mA
50
200
hFE(3) *
VCE=10V, IC=50mA
45
hFE(4) *
VCE=10V, IC=100mA
40
VCE(sat)1*
IC=1mA, IB=0.1mA
0.4
V
Collector-emitter saturation voltage
VCE(sat)2*
IC=10mA, IB=1mA
0.5
V
VCE(sat)3*
IC=50mA, IB=5mA
0.75
V
Base-emitter saturation voltage
VBE(sat)*
IC=10mA, IB=1mA
0.75
V
Collector output capacitance
Cob
VCB=20V, IE=0, f=1MHz
7
pF
Emitter input capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
130
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
JinYu
semiconductor
www.htsemi.com