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| MMBTA42 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistor | |||
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TRANSISTOR(NPN)
FEATURES
z High breakdown voltage
z Low collector-emitter saturation voltage
z Complementary to MMBTA92 (PNP)
Marking: 1D
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÓ¨JA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
300
300
5
0.3
0.35
357
150
-55to +150
Units
V
V
V
A
W
â/mW
â
â
MMBTA42
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
IC= 100μA, IE=0
IC= 1mA, IB=0
IE= 100μA, IC=0
VCB=200V, IE=0
VEB= 5V, IC=0
VCE= 10V, IC= 1mA
VCE= 10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB= 2mA
IC= 20mA, IB=2mA
VCE= 20V, IC= 10mA,
f=30MHz
MIN
300
300
5
60
100
60
50
MAX UNIT
V
V
V
0.25 μA
0.1
μA
200
0.2
V
0.9
V
MHz
JinYu
semiconductor
www.htsemi.com
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