MMBTA28 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

TRANSISTOR(NPN)
FEATURES
 High Current Gain
MARKING: 3SS
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
12
500
200
625
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
MMBTA28
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Test conditions
IC=100µA, IE=0
Min
Typ
Max Unit
80
V
Collector-emitter sustain voltage
VCEO(sus) IC=100µA, VBE=0
80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
12
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
µA
Collector cut-off current
ICES
VCE=60V, VBE=0
0.5
µA
Emitter cut-off current
IEBO
VEB=10V, IC=0
0.1
µA
DC current gain
hFE(1) *
VCE=5V, IC=10mA
10
K
hFE(2) *
VCE=5V, IC=100mA
10
K
Collector-emitter saturation voltage
VCE(sat)1*
VCE(sat)2*
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
1.2
V
1.5
V
Base-emitter voltage
VBE*
VCE=5V, IC=100mA
2
V
Collector output capacitance
Cob
VCB=1V, IE=0, f=1MHz
8
pF
Transition frequency
VCE=5V,IC=10mA,
fT
125
f=100MHz
MHz
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.
JinYu
semiconductor
www.htsemi.com