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| MMBTA13 Datasheet, PDF (1/3 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR | |||
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MMBTA13,14
TRANSISTOR (NPN)
FEATURES
Darlington Amplifier
Marking : MMBTA13:K2D; MMBTA14:K3D
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
10
IC
Collector Current -Continuous
0.3
PC
Collector Power Dissipation
300
RθJA
Thermal Resistance Junction to Ambient
417
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55 to +150
Units
V
V
V
A
mW
â/W
â
â
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO*
IEBO*
hFE(1) *
hFE(2) *
VCE (sat)*
VBE (sat) *
VBE *
fT
Cob
Test conditions
MIN MAX
IC= 100μA, IE=0
30
IC= 100uA, IB=0
30
IE= 100μA, IC=0
10
VCB=30 V , IE=0
0.1
VEB= 10V , IC=0
0.1
VCE=5V, IC= 10mA
MMBTA13 5000
MMBTA14 10000
VCE=5V, IC= 100mA
MMBTA13 10000
MMBTA14 20000
IC=100mA, IB=0.1mA
1.5
IC=100mA, IB=0.1mA
2
VCE=5V,IC= 100mA
VCE=5V, IC= 10mA
f=100MHz
VCB=10V,IE=0,f=1MHz
2.0
125
12
UNIT
V
V
V
μA
μA
V
V
V
MHz
pF
* Pulse Test : pulse widthâ¤300μs,duty cycleâ¤2%.
JinYu
semiconductor
www.htsemi.com
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