MMBTA06 Datasheet, PDF (1/1 Pages) Samsung semiconductor – NPN (DRIVER TRANSISTOR)

MMBTA06
TRANSISTOR(NPN)
SOT–23
FEATURES
 For Switching and Amplifier Applications
 Complementary Type PNP Transistor MMBTA56
MARKING: 1GM
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
80
VCEO Collector-Emitter Voltage
80
VEBO Emitter-Base Voltage
4
IC
Collector Current
500
PC
Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA, IC=0
4
V
Collector cut-off current
ICBO
VCB=80V, IE=0
0.1
µA
Collector cut-off current
ICES
VCE=60V, IB=0
0.1
µA
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1
µA
DC current gain
hFE(1) VCE=1V, IC=10mA
100
400
hFE(2) VCE=1V, IC=100mA
100
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
0.25
V
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=10mA
1.2
V
Transition frequency
fT
VCE=2V,IC=10mA, f=100MHz
100
MHz
JinYu
semiconductor
www.htsemi.com