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| MMBT589 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor | |||
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MMBT58 9
TRANSISTOR(PNP)
SOT-23
FEATURES
z High current surface mount PNP silicon switching transistor for
Load management in portable applications
MARKING :589
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
-50
-30
-5
-1
310
403
150
-55-150
Units
V
V
V
A
mW
â/W
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=-100μA,IE=0
-50
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
Collector cut-off current
ICBO
VCB=-30V,IE=0
Collector-emitter cut-off current
ICES
VCES=-30V
Emitter cut-off current
IEBO
VEB=-4V,IC=0
hFE1 VCE=-2V,IC=-1mA
100
DC current gain
hFE2 VCE=-2V,IC=-500mA
100
hFE3 VCE=-2V,IC=-1A
80
hFE4 VCE=-2V,IC=-2A
40
VCE(sat)1 IC= -500mA, IB=-50mA
Collector-emitter saturation voltage VCE(sat)2 IC= -1A, IB=-100mA
VCE(sat)3 IC= -2A, IB=-200mA
Base-emitter saturation voltage
VBE(sat) IC= -1A, IB=-100mA
Base-emitter Turn-on voltage
VBE(on)
VCE=-2V, IC=-1A
Transition frequency
VCE=-5V, IC=-100mA ,
fT
100
f =100MHz
Collector Output Capacitance
Cob
f=1MHz
TYP MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
300
-0.25 V
-0.3
V
-0.65 V
-1.2
V
-1.1
V
MHz
15
pF
JinYu
semiconductor
www.htsemi.com
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