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| MMBT5551 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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TRANSISTOR(NPN)
FEATURES
z Complementary to MMBT5401
z Ideal for Medium Power Amplification and Switching
MARKING: G1
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
180
160
6
600
300
416
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
MMBT5551
SOTâ23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
180
V
Collector-emitter breakdown voltage
V(BR)CEO* IC=1mA, IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=120V, IE=0
50
nA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
hFE(3) *
VCE(sat)1*
VCE(sat)2*
VBE(sat)1*
VBE(sat)2*
VEB=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
50
nA
80
100
300
50
0.15 V
0.2
V
1
V
1
V
Transition frequency
fT
VCE=10V,IC=10mA, f=100MHz 100
300 MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
6
pF
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
CLASSIFICATION OF hFE (2)
RANK
RANGE
L
100-200
H
200-300
JinYu
semiconductor
www.htsemi.com
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