MMBT5550 Datasheet, PDF (1/1 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

TRANSISTOR(NPN)
FEATURES
 High Voltage Transistor
MARKING:M1F
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
160
VCEO Collector-Emitter Voltage
140
VEBO Emitter-Base Voltage
6
IC
Collector Current
600
PC
Collector Power Dissipation
225
RΘJA Thermal Resistance From Junction To Ambient
556
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
MMBT5550
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=0.1mA, IE=0
160
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA, IB=0
140
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.01mA, IC=0
6
V
Collector cut-off current
ICBO
VCB=100V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
50
nA
hFE(1)
VCE=5V, IC=1mA
60
DC current gain
hFE(2)
VCE=5V, IC=10mA
60
250
hFE(3)
VCE=5V, IC=50mA
20
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
V
0.25
V
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
V
1.2
V
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
JinYu
semiconductor
www.htsemi.com