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| MMBT4403 Datasheet, PDF (1/3 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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TRANSISTOR (PNP)
FEATURES
Switching transistor
MARKING ï¼MMBT4403=2T
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.6
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
MMBT4403
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)CBO IC=-100μA , IE=0
V(BR)CEO IC= -1mA , IB=0
V(BR)EBO IE=-100μA, IC=0
ICBO
VCB=-35V, IE=0
ICEO
VCE=-35 V, IB=0
IEBO
VEB=-4V,IC=0
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
hFE
VCE=-2V, IC= -150mA
100 300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
IC=-150mA, IB=-15mA
IC=- 150mA, IB=-15mA
VCE= -10V, IC= -20mA
f = 100MHz
-0.4
V
-0.95 V
200
MHz
JinYu
semiconductor
www.htsemi.com
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