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| MMBT4401 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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MMBT4401
TRANSISTOR(NPN)
FEATURES
Switching transistor
MARKING: MMBT4401=2X
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RÓ¨JA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
60
40
6
600
0.3
150
-55to +150
357
V
V
V
mA
W
â
â
â/mW
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V(BR)CBO IC= 100μA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE= 100μA, IC=0
ICBO
VCB=50 V, IE=0
ICEO
VCE=30 V, IB=0
IEBO
VEB=5V, IC=0
hFE
VCE=1V, IC=150mA
VCE(sat) IC=150mA, IB=15mA
VBE(sat)
fT
IC= 150mA, IB=15mA
VCE= 10V, IC= 20mA
f = 100MHz
MIN MAX UNIT
60
V
40
V
6
V
0.1
μA
0.1
μA
0.1
μA
100 300
0.4
V
0.95
V
250
MHz
JinYu
semiconductor
www.htsemi.com
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