MMBT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
TRANSISTOR(NPN)
SOT-23
FEATURES
z Epitaxial planar die construction
z Complementary PNP Type available(MMBT2907A)
1. BASE
2.EMITTER
3.COLLECTOR
MARKING: 1P
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
RΘ_JA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value
75
40
6
600
250
500
150
-55to+150
Units
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_CEX
I_EBO
h_FE(1) ^*
h_FE(2)
h_FE(3) ^*
V_CE(sat) ^*
V_BE(sat) ^*
f_T
t_d
t_r
t_S
t_f
I_C= 10μA, I_E=0
I_C= 10mA, I_B=0
I_E=10μA, I_C=0
V_CB=60V, I_E=0
V_CE=30V,V_BE(off)=3V
V_EB= 3V, I_C=0
V_CE=10V, I_C= 150mA
V_CE=10V, I_C= 0.1mA
V_CE=10V, I_C= 500mA
I_C=500 mA, I_B= 50mA
I_C=150 mA, I_B=15mA
I_C=500 mA, I_B= 50mA
I_C=150 mA, I_B=15mA
V_CE=20V, I_C= 20mA,
f=100MHz
V_CC=30V, V_BE(off)=-0.5V
I_C=150mA , I_B1= 15mA
V_CC=30V, I_C=150mA
I_B1=-I_B2=15mA
Min
75
40
6
100
40
42
300
Typ
Max Unit
V
V
V
0.01
μA
0.01
μA
0.1
μA
300
1
0.3
V
2.0
1.2
V
MHz
10
nS
25
nS
225
nS
60
nS
JinYu
semiconductor
www.htsemi.com