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| M8550 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ PNP ） | |||
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TRANSISTOR(PNP)
FEATURES
Power dissipation
MARKING: Y21
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-0.8
A
PC
Collector power dissipation
200
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
M8 550
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC= -100μA , IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO IE= -100μA, IC=0
-6
Collector cut-off current
ICBO
VCB= -35V , IE=0
Collector cut-off current
ICEO
VCE= -20V , IB=0
hFE(1)
VCE=-1V, IC=-5mA
45
DC current gain
hFE(2)
VCE=-1V, IC=-100mA
85
hFE(3)
VCE=-1V, IC=-800mA
40
Collector-emitter saturation voltage
VCE(sat) IC= -800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Transition frequency
VCE=-6V, IC= -20mA
fT
f=30MHz
150
MAX
-0.1
-0.1
UNIT
V
V
V
μA
μA
300
-0.5
V
-1.2
V
MHz
* Pulse Test :pulse width ⤠300µs , duty cycle â¤2%.
CLASSIFICATION OF hFE(2)
Rank
Range
L
85-200
H
200-300
JinYu
semiconductor
www.htsemi.com
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