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| M8050 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ NPN ） | |||
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TRANSISTOR(NPN)
FEATURES
Power dissipation
MARKING: Y11
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
SOT-23
M8050
1. BASE
2. EMITTER
3. COLLECTOR
Value
40
25
6
0.8
0.2
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
40
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
6
Collector cut-off current
ICBO
VCB= 35V, IE=0
Collector cut-off current
ICEO
VCE= 20V, IB=0
hFE(1)
VCE=1V, IC=5mA
45
DC current gain
hFE(2)
VCE=1V, IC=100mA
80
hFEï¼3ï¼
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat) IC= 800mA, IB=80mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=800mA, IB= 80mA
fT
VCE=6V, IC= 20mA , f=30MHz
150
MAX
0.1
0.1
UNIT
V
V
V
μA
μA
300
0.5
V
1.2
V
MHz
* Pulse Test : pulse width ⤠300µs , duty cycle â¤2%.
CLASSIFICATION OF hFE(2)
Rank
Range
L
80-200
H
200-300
JinYu
semiconductor
www.htsemi.com
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