M28S Datasheet, PDF (1/1 Pages) Unisonic Technologies – AUDIO OUTPUT DRIVER AMPLIFIER

M28 S
TRANSISTOR(NPN)
SOT–23
FEATURES
 Excellent h_FE Linearity
 High DC Current Gain
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
20
VEBO Emitter-Base Voltage
6
IC
Collector Current
1
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA, IC=0
6
Collector cut-off current
ICBO
VCB=35V, IE=0
Collector cut-off current
ICEO
VCE=20V, IB=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
hFE(1) VCE=1V, IC=1mA
290
DC current gain
hFE(2) VCE=1V, IC=100mA
300
hFE(3) VCE=1V, IC=300mA
300
hFE(4) VCE=1V, IC=500mA
300
Collector-emitter saturation voltage
VCE(sat) IC=600mA, IB=20mA
Transition frequency
fT
VCE=10V,IE=50mA, f=1MHz
100
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(2)
RANK
RANGE
MARKING
B
300–550
C
500–700
28S
Typ
Max
Unit
V
V
V
0.1
µA
5
µA
0.1
µA
1000
0.55
V
MHz
9
pF
D
650–1000
JinYu
semiconductor
www.htsemi.com