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| KTD1304 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING) | |||
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KTD31 04
TRANSISTOR (NPN)
SOT-23
FEATURES
·High emitter-base voltage
·low on resistance
MARKING: MAX
1. BASE
2. EMITTER
3.COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
20
12
0.3
0.2
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
output capacitance
On resistance
Symbol
Test conditions
MIN
V(BR)CBO IC=100μA, IE=0
25
V(BR)CEO IC=1mA, IB=0
20
V(BR)EBO
IE=100μA, IC=0
12
ICBO
VCB=25 V, IE=0
IEBO
VEB=12V, IC=0
hFE(FOR) VCE=2V, IC=4 mA
200
hFE(REV) VCE= 2V, IC= 4mA
20
VCE(sat) IC= 100mA, IB=10 mA
VBE(sat)
fT
Cob
R(on)
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
f=100MHz
VCB=10V,IE=0,f=1MHz
Vin=0.3V,IB=1mA,f=1KHZ
TYP MAX UNIT
V
V
V
0.1 μA
0.1 μA
1000
0.25 V
1
V
60
MHz
10
pF
0.6
Ω
JinYu
semiconductor
www.htsemi.com
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