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| KTC4379 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) | |||
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KTC4379
TRANSISTOR (NPN)
SOT-89
FEATURES
z Low saturation voltage
z High speed switching time
z Complementary to KTA1666
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
150
-55-150
Units
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
Symbol
Test conditions
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, IB=0
V(BR)EBO IE=1mA, IC=0
ICBO
VCB=50V, IE=0
IEBO
VEB=5V, IC=0
hFE(1) VCE=2V, IC=500mA
hFE(2) VCE=2V, IC=1.5A
VCE(sat) IC=1A, IB=50mA
VBE(sat) IC=1A, IB=50mA
fT
VCE=2V, IC=500mA
Cob
VCB=10V, IE=0, f=1MHz
ton
tstg
VCC=30V, IC=1A, IB1=-IB2=-0.05A
tf
MIN
50
50
5
70
40
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
240
0.5
V
1.2
V
120
MHz
30
pF
0.1
1.0
μs
0.1
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
70-140
UO
Y
120-240
UY
JinYu
semiconductor
www.htsemi.com
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