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| KTC4373 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) | |||
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TRANSISTOR (NPN)
FEATURES
z Small Flat Package
z High Voltage Application
z High Voltage
z High Transition Frequency
KTC4373
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
800
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
VCB=120V,IE=0
VEB=5V,IC=0
VCE=5V, IC=100mA
IC=500mA,IB=50mA
VCE=5V, IC=500mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC= 500mA
Min Typ Max Unit
120
V
120
V
5
V
100
nA
100
nA
80
240
1
V
1
V
30
pF
120
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
80â160
CO
Y
120â240
CY
JinYu
semiconductor
www.htsemi.com
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