 English |
|
|
|
|
|
|
|
| KTC4075 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
| |||
|
KTC4075
TRANSISTOR (NPN)
FEATURES
z Excellent hFE linearity
z High hFE
z Low Noise
z Complementary to KTA2014
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
100
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA, IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
5
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE VCE= 6V, IC=2mA
70
Collector-emitter saturation voltage
VCEsat IC=100mA, IB= 10mA
Transition frequency
fT
VCE=10V, IC= 1mA
80
Collector output capacitance
Cob
VCE=10V, IE=0, f=1MHz
Noise figure
NF
VCE=6V,IE=0.1mA, f=1KHz,RG=10Kâ¦
Units
V
V
V
mA
mW
â
â
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
V
V
V
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF hFE
Rank
O
Range
70~140
Marking
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL
JinYu
semiconductor
www.htsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese