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| KTC3876 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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KTC3876
TRANSISTOR (NPN)
SOT-23
FEATURES
· High hFE
· Complementary to KTA1505
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
500
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Marking
Symbol
Test conditions
V(BR)CBO IC=100μA, IE=0
V(BR)CEO
V(BR)EBO
IC= 1mA, IB=0
IE= 100μA, IC=0
ICBO
VCB= 35V, IE=0
IEBO
VEB= 5V, IC=0
hFE1 VCE=1V, IC= 100mA
VCE=6V, IC= 400mA
O
hFE2
Y
VCE(sat)
VBE
fT
Cob
IC=100mA, IB= 10mA
VCE=1V, IB= 100mA
VCE=6V, IC=20mA
VCB=6V,IE=0,f=1MHZ
O
70-140
WO
Y
120-240
WY
MIN TYP MAX UNIT
35
V
30
V
5
V
0.1 μA
0.1 μA
70
400
25
40
0.25
V
1
V
300
MHz
7
pF
GR(G)
200-400
WG
JinYu
semiconductor
www.htsemi.com
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