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| KTC3875 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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KTC3875
TRANSISTOR (NPN)
FEATURES
· High hFE
· Low noise
· Complementary to KTA1504
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
150
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
60
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
5
Collector cut-off current
ICBO
VCB= 60V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE
VCE= 6V, IC= 2mA
70
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA
base-emitter saturation voltage
VBE(sat) IC=100mA, IB= 10mA
Transition frequency
fT
VCE=10V, IC= 1mA
80
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE
Rank
Range
Marking
Cob
NF
O
70-140
ALO
VCB=10V,IE=0,f=1MHZ
VCE=6V,IC=0.1mA,Rg=10kâ¦,f=1KHZ
Y
120-240
ALY
GR
200-400
ALG
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
700
0.1 0.25
V
1
V
MHz
2.0 3.5
pF
1.0 10
dB
BL
350-700
ALL
JinYu
semiconductor
www.htsemi.com
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