 English |
|
|
|
|
|
|
|
| KTC3265 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING) | |||
| |||
|
TRANSISTOR (NPN)
FEATURES
z High DC current gain
z Complementary to KTA1298
KTC3256
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Marking
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
V BE
fT
Cob
Test conditions
IC= 100μA, IE=0
IC= 10mA, IB=0
IE=100μA, IC=0
VCB=30 V, IE=0
VEB=5 V, IC=0
VCE=1V, IC= 100mA
IC=500mA, IB=20mA
VCE=1V,IC=10mA
VCE=5V, IC=10mA
f=100MHz
VCB=10V,IE=0,f=1MHZ
O
100-200
EO
MIN
35
30
5
100
0.5
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
320
0.5
V
0.8
V
120
MHz
13
pF
Y
160-320
EY
JinYu
semiconductor
www.htsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese