KTC3205 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

KTC3205
TRANSISTOR (NPN)
FEATURES
Complementary to KTA1273
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
30
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
2
A
P_C
Collector Power Dissipation
1
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)_CBO
Ic= 1mA , I_E=0
30
Collector-emitter breakdown voltage V(BR)CEO
I_C= 10mA, I_B=0
30
Emitter-base breakdown voltage
V(BR)_EBO
I_E= 1mA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 30V, I_E=0
Emitter cut-off current
I_EBO
V_EB= 5V, I_C=0
DC current gain
h_FE
V_CE= 2 V, I_C= 500 mA
100
Collector-emitter saturation voltage
V_CE (sat)
I_C= 1.5A, I_B= 30 mA
Base-emitter voltage
V_BE
V_CE=2V, I_C= 500mA
Transition frequency
f_T
V_CE= 2 V, I_C= 500mA
Collector Output Capacitance
CLASSIFICATION OF h_FE
Rank
C_ob
V_CB=10V, I_E=0,f=1MH_Z
O
0.1
0.1
320
2.0
1.0
120
13
Y
Range
100-200
160-320
UNIT
V
V
V
µA
µA
V
V
MHz
pF
JinYu
semiconductor
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