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| KTA2014 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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KTA2014
TRANSISTOR (PNP)
FEATURES
z Low frequency power amplifier application
z Power switching application
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
150
mA
PC*
Collector Power Dissipation
100
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise Figure
Symbol
Test conditions
V(BR)CBO IC=- 0.1mA, IE=0
V(BR)CEO IC= -1mA, IB=0
V(BR)EBO IE=-0.1mA, IC=0
ICBO
VCB=-50V, IE=0
IEBO
VEB= -5V, IC=0
hFE
VCE=-6V,IC=-2mA
VCE(sat)
fT
Cob
NF
IC=-100mA, IB= -10mA
VCE=-10V, IC=-1mA,
VCB=-10V, IE=0
f=1MHz
VCE=-6V, IC=-0.1mA
f=1KHz,Rg=10Kâ¦
MIN
TYP
MAX UNIT
-50
V
-50
V
-5
V
-0.1
μA
-0.1
μA
70
400
-0.3
V
80
MHz
7
pF
10
dB
CLASSIFICATION OF hFE
Rank
Range
MARKING
O(2)
70-140
SO
Y(4)
120-240
SY
GR(6)
200-400
SG
JinYu
semiconductor
www.htsemi.com
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