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| KTA1668 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, INDUSTRIAL) | |||
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KTA1668
TRANSISTOR (PNP)
FEATURES
z High voltage: VCEO=-60V
z High transistors frequency
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector power dissipation
500
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-0.1mA,IE=0
-80
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1 μA
DC current gain
hFE1
hFE2
VCE=-2V,IC=-50mA
VCE=-2V,IC=-1A
60
200
30
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
-0.7
V
Base-emitter saturation voltage
VB E(sat) IC=-500mA,IB=-50mA
-1.2
V
Transition frequency
fT
VCE=-10V,IC=-50mA, f=100MHz
150
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
12
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
60-120
JO
Y
100-200
JY
JinYu
semiconductor
www.htsemi.com
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