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| KTA1664 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) | |||
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KTA1664
TRANSISTOR (PNP)
FEATURES
z Complementary to KTC4376
z Small Flat Package
z High Current Application
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-800
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -1mA,IE=0
-35
V
V(BR)CEO IC=-10mA,IB=0
-30
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO
VCB=-35V,IE=0
-100
nA
IEBO
VEB=-5V,IC=0
-100
nA
VCE=-1V, IC=-100mA
100
320
hFE
VCE=-1V, IC=-700mA
35
VCE(sat) IC=-500mA,IB=-20mA
-0.7
V
VBE
VCE=-1V, IC=-10mA
-0.5
-0.8
V
Cob
VCB=-10V,IE=0, f=1MHz
19
pF
fT
VCE=-5V,IC= -10mA
120
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
100â200
RO
Y
160â320
RY
JinYu
semiconductor
www.htsemi.com
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