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| KTA1663 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) | |||
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KTA1663
TRANSISTOR (PNP)
FEATURES
z High current applications
z Complementary to KTC4375
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-30
-5
-1.5
500
150
-55-150
Units
V
V
V
A
mW
â
â
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=-1mA, IE=0
-30
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA, IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA, IC=0
-5
Collector cut-off current
ICBO
VCB=-30V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-2V, IC=-0.5A
100
Collector-emitter saturation voltage
VCE(sat) IC=-1.5A, IB=-30mA
Base-emitter voltage
VBE
VCE=-2V, IC=-0.5A
Transition frequency
fT
VCE=-2V, IC=-500mA
Collector output capacitance
Cob
VCB=-10V, IE=0,f=1MHz
TYP MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
320
-2
V
-1
V
120
MHz
50 MHz
CLASSIFICATION OF hFE
Rank
Range
O
100-200
Y
160-320
JinYu
semiconductor
www.htsemi.com
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