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| KTA1298 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING) | |||
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TRANSISTOR (PNP)
FEATURES
z Low frequency power amplifier application
z Power switching application
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
KTA1298
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol Parameter
Value
Units
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-35
V
-30
V
-5
V
IC
Collector Current âContinuous
-0.8
A
PC*
Collector Dissipation
200
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
IC=- 1mA,IE=0
V(BR)CEO
IC= -10mA, IB=0
V(BR)EBO
IE=-1mA, IC=0
ICBO
VCB=-30 V,IE=0
IEBO
VEB= -5V,IC=0
hFE(1)
VCE=-1V, IC=-100mA
hFE(2)
VCE=-1V, IC=-800mA
VCE(sat) IC=-500mA, IB= -20mA
VBE
VCE=-1V, IC=-10mA
fT
VCE=-5V, IC=-10mA,
Cob
VCB=-10V, IE=0,f=1MHz
MIN
-35
-30
-5
100
40
-0.5
TYP MAX UNIT
V
V
V
-0.1
μA
-0.1
μA
320
-0.4
V
-0.8
V
120
MHz
13
pF
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
O
100-200
IO
Y
160-320
IY
JinYu
semiconductor
www.htsemi.com
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