KST10 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – VHF/UHF Transistor

KST10
TRANSISTOR (NPN)
FEATURES
 VHF/UHF Transistor
MARKING:3E1
SOT–23
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
3
IC
Collector Current
40
PC
Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
3
V
Collector cut-off current
ICBO
VCB=25V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=2V, IC=0
0.1
µA
DC current gain
hFE
VCE=10V, IC=4mA
60
Collector-emitter saturation voltage
VCE(sat) IC=4mA, IB=0.4mA
0.5
V
Base-emitter voltage
VBE
VCE=10V, IC=4mA
0.95
V
Transition frequency
fT
VCE=10V,IC=4mA, f=100MHz
650
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
0.7
pF
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