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| HM879 Datasheet, PDF (1/1 Pages) Hi-Sincerity Mocroelectronics – SILICON NPN EPITAXIAL TYPE TRANSISTOR | |||
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HM879
TRANSISTOR (NPN)
FEATURES
z High Current
z Low Voltage
z General Purpose Amplifier Applications
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MARKING:879
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
10
6
3
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=20V,IE=0
VEB=4V,IC=0
VCE=2V, IC=3A
IC=3A,IB=60mA
VCE=1V, IC=2A
VCE=10V,IC=50mA
VCB=10V, IE=0, f=1KHz
Min Typ
30
10
6
140
200
30
Max
100
100
0.4
1.5
Unit
V
V
V
nA
nA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
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