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| HM4033 Datasheet, PDF (1/1 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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HM304 3
TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z High Current
z General Purpose Amplifier Applications
MARKING:H4033
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
hFE(4)*
VCE(sat)*
VBE(sat)*
fT
Cob
Test conditions
IC=-10µA,IE=0
IC=-10mA,IB=0
IE=-10µA,IC=0
VCB=-60V,IE=0
VEB=-5V,IC=0
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
Min Typ Max
-80
-80
-5
-100
-100
75
100
70
25
-0.15
-0.5
-0.9
-1.1
100
20
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
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