FMMT593 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FMMT593
TRANSISTOR (PNP)
FEATURES
 Complementary Type FMMT493
MARKING:593
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-120
VCEO Collector-Emitter Voltage
-100
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-1
PC
Collector Power Dissipation
250
RΘJA Thermal Resistance From Junction To Ambient
500
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-120
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0
-100
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-100V, IE=0
-0.1
µA
Collector cut-off current
ICES
VCES=-100V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.1
µA
hFE(1) * VCE=-5V, IC=-1mA
100
DC current gain
hFE(2) *
hFE(3) *
VCE=-5V, IC=-250mA
VCE=-5V, IC=-0.5A
100
100
300
hFE(4) * VCE=-5V, IC=-1A
50
Collector-emitter saturation voltage
VCE(sat)1* IC=-250mA, IB=-25mA
VCE(sat)2* IC=-500mA, IB=-50mA
-0.2
V
-0.3
V
Base-emitter saturation voltage
VBE(sat)* IC=-500mA, IB=-50mA
-1.1
V
Base-emitter voltage
VBE* VCE=-5V, IC=-1mA
-1
V
Transition frequency
fT
VCE=-10V,IC=-50mA, f=100MHz
50
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
5
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
JinYu
semiconductor
www.htsemi.com