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| FMMT591 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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FMMT591
TRANSISTOR (PNP)
FEATURES
Low equivalent on-resistance
SOT-23
Marking :591
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO1
IC=-100μA, IE=0
IC=-10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-60V, IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)
hFE(2) 1
hFE(3) 1
hFE(4) 1
VCE(sat)1 1
VCE(sat)2 1
VBE(sat) 1
VBE1
VEB=-4V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
Transition frequency
fT
VCE=-10V,IC=-50mA,,f=100MHz
Collector output capacitance
Cob
VCB=-10V,f=1MHz
1Measured under pulsed conditions, Pulse width=300μs, Duty cycleâ¤2%.
MIN TYP MAX UNIT
-80
V
-60
V
-5
V
-0.1 μA
-0.1 μA
100
100
300
80
15
-0.3 V
-0.6 V
-1.2
V
-1
V
150
MHz
10
pF
JinYu
semiconductor
www.htsemi.com
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