FMMT493 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT493
TRANSISTOR (NPN)
FEATURES
 Complementary Type FMMT593
MARKING:493
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
120
VCEO Collector-Emitter Voltage
100
VEBO Emitter-Base Voltage
5
IC
Collector Current
1000
PC
Collector Power Dissipation
250
RΘJA Thermal Resistance From Junction To Ambient
500
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
100
V
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=100V, IE=0
0.1
µA
Collector cut-off current
ICES
VCES=100V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.1
µA
hFE(1) * VCE=10V, IC=1mA
100
DC current gain
hFE(2) * VCE=10V, IC=250mA
100
300
hFE(3) * VCE=10V, IC=0.5A
60
hFE(4) * VCE=10V, IC=1A
20
Collector-emitter saturation voltage
VCE(sat)1* IC=500mA, IB=50mA
VCE(sat)2* IC=1A, IB=100mA
0.3
V
0.6
V
Base-emitter saturation voltage
VBE(sat)* IC=1A, IB=100mA
1.15
V
Base-emitter voltage
VBE* VCE=10V, IC=1A
1
V
Transition frequency
fT
VCE=10V,IC=50mA, f=100MHz
150
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
10
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
JinYu
semiconductor
www.htsemi.com