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| FMMT491 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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FMMT491
TRANSISTOR (NPN)
SOT-23
FEATURES
Low equivalent on-resistance
Marking :491
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
80
60
5
1
250
150
-55-150
Units
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO1
IC=100μA,IE=0
IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
hFE(1)
VCE=5V,IC=1mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE(2) 1
hFE(3) 1
hFE(4) 1
VCE(sat)1 1
VCE(sat)2 1
VBE(sat) 1
VCE=5V,IC=500mA
VCE=5V,IC=1A
VCE=5V,IC=2A
IC=500mA,IB=50mA
IC=1A,IB=100mA
IC=1A,IB=100mA
Base-emitter voltage
VBE1
VCE=5V,IC=1A
Transition frequency
fT
VCE=10V,IC=50mA,,f=100MHz
Collector output capacitance
Cob
VCB=10V,f=1MHz
1Measured under pulsed conditions, Pulse width=300μs, Duty cycleâ¤2%.
MIN TYP MAX UNIT
80
V
60
V
5
V
0.1
μA
0.1
μA
100
100
300
80
30
0.25
V
0.5
V
1.1
V
1
V
150
MHz
10
pF
JinYu
semiconductor
www.htsemi.com
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